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1

Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances

McD. Hobgood, H., Brady, M.F., Calus, M.R., Jenny, Jason R., Leonard, R.T., Malta, D.P., Müller, Stephan G., Powell, Adrian R., Tsvetkov, Valeri F., Glass, R.C., Carter Jr., Calvin H.

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 1.83 MB

english, 2004

2

Thermal Activation Energies for the Three Inequivalent Lattice Sites for the BSi Acceptor in 6H-SiC

Evwaraye, A.O., Smith, S.R., Mitchel, W.C., McD. Hobgood, H., Augustine, G., Balakrishna, Vijay

Journal:

Materials Science Forum

Year:

1997

File:

PDF, 375 KB

1997

3

Large Diameter, Low Defect Silicon Carbide Boule Growth

Carter Jr., Calvin H., Glass, R.C., Brady, M.F., Malta, D.P., Henshall, D., Müller, Stephan G., Tsvetkov, Valeri F., McD. Hobgood, H., Powell, Adrian R.

Journal:

Materials Science Forum

Year:

2001

File:

PDF, 398 KB

2001

4

Electron paramagnetic resonance studies of a carbon vacancy-related defect in as-grown 4H–SiC

V.V Konovalov, M.E Zvanut, V.F Tsvetkov, J.R Jenny, St.G Müller, H.McD Hobgood

Journal:

Physica B: Condensed Matter

Year:

2001

Language:

english

File:

PDF, 125 KB

english, 2001

5

High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production

Müller, Stephan G., Brady, M.F., Brixius, W.H., Fechko, G., Glass, R.C., Henshall, D., McD. Hobgood, H., Jenny, Jason R., Leonard, R.T., Malta, D.P., Powell, Adrian R., Tsvetkov, Valeri F., Allen, S.T

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 417 KB

2002

6

Deep Levels in SiC:V by High Temperature Transport Measurements

Mitchel, W.C., Perrin, Ronald, Goldstein, Jonathan, Roth, Matthew D., Ahoujja, M., Smith, S.R., Evwaraye, A.O., Solomon, J.S., Landis, G., Jenny, Jason R., McD. Hobgood, H., Augustine, G., Balakrishna

Journal:

Materials Science Forum

Year:

1998

File:

PDF, 316 KB

1998

7

Large area SiC substrates and epitaxial layers for high power semiconductor devices — An industrial perspective

St.G. Müller, M.F. Brady, A.A. Burk, H.McD. Hobgood, J.R. Jenny, R.T. Leonard, D.P. Malta, A.R. Powell, J.J. Sumakeris, V.F. Tsvetkov, C.H. Carter Jr.

Journal:

Superlattices and Microstructures

Year:

2006

Language:

english

File:

PDF, 841 KB

english, 2006

8

Status of 4H-SiC Substrate and Epitaxial Materials for Commercial Power Applications

Powell, A.R., Sumakeris, J.J., Leonard, R.T., Brady, M.F., Müller, St.G., Tsvetkov, V.F., Hobgood, H.McD, Burk, A.A., Paisley, M.J., Glass, R.C., Carter, C.H.

Journal:

MRS Proceedings

Year:

2004

Language:

english

File:

PDF, 1.35 MB

english, 2004

9

Defects in SiC substrates and epitaxial layers affecting semiconductor device performance

Müller, St. G., Sumakeris, J. J., Brady, M. F., Glass, R. C., Hobgood, H. McD., Jenny, J. R., Leonard, R., Malta, D. P., Paisley, M. J., Powell, A. R., Tsvetkov, V. F., Allen, S. T., Das, M. K., Palmo

Journal:

The European Physical Journal Applied Physics

Year:

2004

Language:

english

File:

PDF, 556 KB

english, 2004

10

Generation of Stacking Faults in Highly Doped n-Type 4H-SiC Substrates

Zhang, M., McD. Hobgood, H., Treu, Michael, Pirouz, P.

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 593 KB

english, 2004

11

High Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor Transport

Augustine, G., McD. Hobgood, H., Balakrishna, Vijay, Dunne, Greg, Hopkins, R.H., Thomas, R.N., Doolittle, W.A., Rohatgi, A.

Journal:

Materials Science Forum

Year:

1998

File:

PDF, 313 KB

1998

12

Deformation of 4H-SiC Single Crystals Oriented for Prism Slip

Zhang, M., McD. Hobgood, H., Pirouz, P.

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 1.42 MB

english, 2004

13

GROWTH OF SiC SUBSTRATES

POWELL, ADRIAN, JENNY, JASON, MULLER, STEPHAN, McD. HOBGOOD, H., TSVETKOV, VALERI, LENOARD, ROBERT, CARTER, CALVIN

Journal:

International Journal of High Speed Electronics and Systems

Year:

2006

Language:

english

File:

PDF, 4.81 MB

english, 2006

14

Nitrogen doping and multiplicity of stacking faults in SiC

Pirouz, P., Zhang, M., Hobgood, H. McD., Lancin, M., Douin, J., Pichaud, B.

Journal:

Philosophical Magazine

Year:

2006

Language:

english

File:

PDF, 502 KB

english, 2006

15

Enhanced Carrier Lifetime in Bulk-Grown 4H-SiC Substrates

Jenny, Jason R., Malta, D.P., Tsvetkov, V.T., Das, Mrinal K., McD. Hobgood, H., Carter Jr., Calvin H.

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 372 KB

english, 2006

16

Microwave photoconductivity decay characterization of high-purity 4H-SiC substrates

Kumar, R. J., Borrego, J. M., Gutmann, R. J., Jenny, J. R., Malta, D. P., Hobgood, H. McD., Carter, C. H.

Journal:

Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 1.30 MB

english, 2007

17

Valence Band Splittings of 15R-SiC Measured using Wavelength Modulated Absorption Spectroscopy

Devaty, Robert P., Bai, Song, Choyke, W.J., McD. Hobgood, H., Larkin, David J.

Journal:

Materials Science Forum

Year:

2001

File:

PDF, 353 KB

2001

18

Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission

Shigiltchoff, O., Bai, Song, Devaty, Robert P., Choyke, W.J., Kimoto, Tsunenobu, McD. Hobgood, H., Neudeck, Philip G., Porter, L.M.

Journal:

Materials Science Forum

Year:

2003

Language:

english

File:

PDF, 168 KB

english, 2003

19

The Brittle-to-Ductile Transition in 4H-SiC

Zhang, M., McD. Hobgood, H., Demenet, J.L., Pirouz, P.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 330 KB

2002

20

Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices

Sumakeris, Joseph J., Das, Mrinal K., Ha, Seo Young, Hurt, Edward, Irvine, Kenneth G., Paisley, Michael J., O'Loughlin, Michael J., Palmour, John W., Skowronski, Marek, McD. Hobgood, H., Carter Jr., C

Journal:

Materials Science Forum

Year:

2005

Language:

english

File:

PDF, 386 KB

english, 2005

21

Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices

Sumakeris, Joseph J., Das, Mrinal K., McD. Hobgood, H., Müller, Stephan G., Paisley, Michael J., Ha, Seo Young, Skowronski, Marek, Palmour, John W., Carter Jr., Calvin H.

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 1.85 MB

english, 2004

22

High-purity semi-insulating 4H-SiC for microwave device applications

J. R. Jenny, D. P. Malta, St G. Müller, A. R. Powell, V. F. Tsvetkov, H. McD Hobgood, R. C. Glass, C. H. Carter

Journal:

Journal of Electronic Materials

Year:

2003

Language:

english

File:

PDF, 231 KB

english, 2003

23

High Carrier Lifetime Bulk-Grown 4H-SiC Substrates for Power Applications

Malta, David, Jenny, J.R., Tsvetkov, V.F., Das, M., Müller, St. G., Hobgood, H. McD., Carter, C.H., Kumar, R.J., Borrego, J.M., Gutmann, R.J.

Journal:

MRS Proceedings

Year:

2006

Language:

english

File:

PDF, 797 KB

english, 2006

24

Physical Vapor Transport Growth and Properties of SiC Monocrystals of 4H Polytype

G. Augustine, McD. Hobgood, V. Balakrishna, G. Dunne, R. H. Hopkins

Journal:

physica status solidi (b)

Year:

1997

Language:

english

File:

PDF, 535 KB

english, 1997

25

Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices

Jenny, Jason R., Malta, D.P., Calus, M.R., Müller, Stephan G., Powell, Adrian R., Tsvetkov, Valeri F., McD. Hobgood, H., Glass, R.C., Carter Jr., Calvin H.

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 364 KB

english, 2004

26

Sublimation-Grown Semi-Insulating SiC for High Frequency Devices

Müller, Stephan G., Brady, M.F., Brixius, W.H., Glass, R.C., McD. Hobgood, H., Jenny, Jason R., Leonard, R.T., Malta, D.P., Powell, Adrian R., Tsvetkov, Valeri F., Allen, S.T., Palmour, John W., Carte

Journal:

Materials Science Forum

Year:

2003

Language:

english

File:

PDF, 461 KB

english, 2003

27

Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications

McD. Hobgood, H., Brady, M.F., Brixius, W.H., Fechko, G., Glass, R.C., Henshall, D., Jenny, Jason R., Leonard, R.T., Malta, D.P., Müller, Stephan G., Tsvetkov, Valeri F., Carter Jr., Calvin H.

Journal:

Materials Science Forum

Year:

2000

Language:

english

File:

PDF, 524 KB

english, 2000

28

Large Diameter 4H-SiC Substrates for Commercial Power Applications

Powell, Adrian R., Leonard, R.T., Brady, M.F., Müller, Stephan G., Tsvetkov, Valeri F., Trussell, R., Sumakeris, Joseph J., McD. Hobgood, H., Burk, Al A., Glass, R.C., Carter Jr., Calvin H.

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 8.91 MB

english, 2004

29

Boron acceptor levels in 6H-SiC bulk samples

Evwaraye, A. O., Smith, S. R., Mitchel, W. C., Hobgood, H. McD.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 320 KB

english, 1997

30

Semi-insulating 6H–SiC grown by physical vapor transport

Hobgood, H. McD., Glass, R. C., Augustine, G., Hopkins, R. H., Jenny, J., Skowronski, M., Mitchel, W. C., Roth, M.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 301 KB

english, 1995

31

The Formation of Super-Disolcation/Micropipe Complexes in 6H-SiC

Giocondi, J., Rohrer, Gregory S., Skowronski, Marek, Balakrishna, Vijay, Augustine, G., McD. Hobgood, H., Hopkins, R.H.

Journal:

Materials Science Forum

Year:

1998

File:

PDF, 495 KB

1998

32

Schottky Barriers for Pt on 6H- and 4H-SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission

Shigiltchoff, O., Kimoto, Tsunenobu, McD. Hobgood, H., Neudeck, Philip G., Porter, L.M., Devaty, Robert P., Choyke, W.J.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 373 KB

2002

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